Home

 

 
 
 

 

 

RT

 

 

 
 
 
 
 
 

 

CNN

 

WOLF BLITZER

Travel

 

CHINA

 

Dr. Beat Richner
Thailand
Angkor Wat
Consumer Reports
Thai Police Harass

Sheldon Adelson

SPORTS
JUNIOR SEAU
ELGIN BAYLOR
BILL RUSSELL
BOB PETTIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CNN'S FAKE NEWS

 

 

 

 

BIZ IT & South Korea - Samsung Electronics Begins Mass Production of 8th-Gen Vertical NAND with Industry’s Highest Bit Density

 

 

 

 

 

Samsung’s eighth-generation V-NAND features both the industry’s highest storage capacity and highest bit density to enable expanded storage space in next-generation servers - The eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers

 

SEOUL, South Korea -- (BUSINESS WIRE)

Friday December 2, 2022

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, as promised at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022, announced that it has begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry’s highest bit density. At 1Tb, the new V-NAND also features the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.

As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down," said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics. "Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations."

Samsung was able to attain the industry’s highest bit density by significantly enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface* — the latest NAND flash standard — Samsung’s eighth-generation V-NAND features an input and output (I/O) speed of up to 2.4 gigabits per second (Gbps), a 1.2X boost over the previous generation. This will enable the new V-NAND to accommodate the performance requirements of PCIe 4.0, and later, PCIe 5.0.

The eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers, while extending its use into the automotive market where reliability is especially critical.

© Copyright: National Radio. Any use of these materials, whole or in part, is prohibited unless authorized in writing by National Radio. Contact: nationalradio@yahoo.com All rights reserved.

 

NBA

 

Los Angeles Lakers
Phil Jackson
NBA MAX French language
Kyrie Irving
LeBron's Castoffs Excel
Giannis Antetokounmpo
KEVIN DURANT
LAKERS BUSTED
KOBE BRYANT
Omri Casspi

 

SPORTS

 

THE NHL's HULLS

 

NFL

 

Tom Brady's Bunch
Christian McCAFFREY

Super Bowl Pioneers

 

MLB

 

Shoehei Ohtani

Mike Piazza

 

SOCCER

 

FIFA Top 10

Thomas Tuchel
FIFA News
Sepp BLATTER MATTER?

 

TENNIS

 

Roger Federer

Emma Raducanu

Williams Family
Julianna Pena
Joe Frazier

RONDA ROUSEY

TIGER WOODS